808nm 200mW Infrared Semiconductor Laser

Price: $339.00


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808nm 200mW Infrared Semiconductor Laser 

Notes:
This is a custom product, $339 is the price of 200mW.If you need other output power,or need to add fiber coupling or have special requirements, please contact us.

[Features]
1.High power stability(<3%)
2.Elliptical spot output

[Specifications]
Wavelength:808nm
Output Power:1-200mW
Spot roundness:>90%
Operating Temperature: 0°C-40°C
Storage Temperature:  -40°C-85°C
 

Parameter Work condition Symbol Min Type Max Unit
Output Power @PO PO     200 mW
Power Stability 2hrs Ps     1 %
Central Wavelength @PO λc   808   nm
Spectral linewidth @PO FWHM   2   nm
Beam Diameter 1/e2 Full angle D   1.5   mm
Beam Divergence Angle  1/e2 Full angle Div   1   mrad
Spot stability 25°C       0.05 mrad
Warming Time @PO Tw     5 min
Noise RMS(10Hz-100MHz) N   1   %
Service Life @PO MTBF 10000     hrs
808nm 200mW Infrared Semiconductor Laser

808nm 200mW Infrared Semiconductor Laser

808nm 200mW Infrared Semiconductor Laser

808nm 200mW Infrared Semiconductor Laser

808nm 200mW Infrared Semiconductor Laser
 




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