.jpg "808nm 200mW Infrared Semiconductor Laser")
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808nm 200mW Infrared Semiconductor Laser
Notes:
This is a custom product, $339 is the price of 200mW.If you need other output power,or need to add fiber coupling or have special requirements, please contact us.
[Features]
1.High power stability(<3%)
2.Elliptical spot output
[Specifications]
Wavelength:808nm
Output Power:1-200mW
Spot roundness:>90%
Operating Temperature: 0°C-40°C
Storage Temperature: -40°C-85°C
| Parameter | Work condition | Symbol | Min | Type | Max | Unit |
| Output Power | @PO | PO | 200 | mW | ||
| Power Stability | 2hrs | Ps | 1 | % | ||
| Central Wavelength | @PO | λc | 808 | nm | ||
| Spectral linewidth | @PO | FWHM | 2 | nm | ||
| Beam Diameter | 1/e2 Full angle | D | 1.5 | mm | ||
| Beam Divergence Angle | 1/e2 Full angle | Div | 1 | mrad | ||
| Spot stability | 25°C | 0.05 | mrad | |||
| Warming Time | @PO | Tw | 5 | min | ||
| Noise | RMS(10Hz-100MHz) | N | 1 | % | ||
| Service Life | @PO | MTBF | 10000 | hrs |
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