830nm 100mW Elliptical Spot Infrared Semiconductoe Laser

Price: $769.00


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830nm 100mW Elliptical Spot Infrared Semiconductoe Laser

Notes:
This is a custom product.If you need other output power,or need to add fiber coupling or have special requirements, please contact us.

[Features]
1.High power stability(<3%)
2.Elliptical spot output

[Specifications]
Wavelength:830nm
Output Power:1-100mW
Operating Temperature: 0°C-40°C
Storage Temperature:  -40°C-85°C
 

Parameter Work condition Symbol Min Type Max Unit
Output Power @PO PO     100 mW
Power Stability 2hrs Ps     3 %
Central Wavelength @PO λc   830   nm
Spectral linewidth @PO FWHM   2   nm
Beam Diameter 1/e2 Full angle D//   2.5   mm
D//   1   mm
Beam Divergence Angle  1/e2 Full angle Div//   0.5   mrad
Div┴   1   mrad
Spot stability 25°C       0.05 mrad
Warming Time @PO Tw     5 min
Noise RMS(10Hz-100MHz) N   1   %
Service Life @PO MTBF 10000     Hrs
830nm 100mW Elliptical Spot Semiconductoe Laser

830nm 100mW Elliptical Spot Semiconductoe Laser

830nm 100mW Elliptical Spot Semiconductoe Laser

830nm 100mW Elliptical Spot Semiconductoe Laser

830nm 100mW Elliptical Spot Semiconductoe Laser
 




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