860nm 2000mW Infrared Square Spot Semiconductor Laser

Price: $2,392.00


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860nm 2000mW Infrared Square Spot Semiconductor Laser 

Notes:
This is a custom product.If you need other output power,or need to add fiber coupling or have special requirements, please contact us.

[Features]
1.High power stability(<3%)
2.Small volume, easy to install

[Specifications]
Wavelength:860nm
Output Power:1-2000mW
Spot roundness:>90%
Operating Temperature: 0°C-40°C
Storage Temperature:  -40°C-85°C
 

Parameter Work condition Symbol Min Type Max Unit
Output Power @PO PO     2000 mW
Power Stability 2hrs Ps     1 %
Central Wavelength @PO λc   860   nm
Spectral linewidth @PO FWHM   2   nm
Beam Diameter 1/e2 Full angle D   3*3   mm
Beam Divergence Angle  1/e2 Full angle Div   10   mrad
Spot stability 25°C       0.05 mrad
Warming Time @PO Tw     5 min
Noise RMS(10Hz-100MHz) N   1   %
Service Life @PO MTBF 10000     Hrs
860nm 2000mW Infrared Square Spot Semiconductor Laser

860nm 2000mW Infrared Square Spot Semiconductor Laser

860nm 2000mW Infrared Square Spot Semiconductor Laser

860nm 2000mW Infrared Square Spot Semiconductor Laser

860nm 2000mW Infrared Square Spot Semiconductor Laser
 




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