860nm 2000mW Infrared Square Spot Semiconductor Laser
Notes:
This is a custom product.If you need other output power,or need to add fiber coupling or have special requirements, please contact us.
[Features]
1.High power stability(<3%)
2.Small volume, easy to install
[Specifications]
Wavelength:860nm
Output Power:1-2000mW
Spot roundness:>90%
Operating Temperature: 0°C-40°C
Storage Temperature: -40°C-85°C
Parameter | Work condition | Symbol | Min | Type | Max | Unit |
Output Power | @PO | PO | 2000 | mW | ||
Power Stability | 2hrs | Ps | 1 | % | ||
Central Wavelength | @PO | λc | 860 | nm | ||
Spectral linewidth | @PO | FWHM | 2 | nm | ||
Beam Diameter | 1/e2 Full angle | D | 3*3 | mm | ||
Beam Divergence Angle | 1/e2 Full angle | Div | 10 | mrad | ||
Spot stability | 25°C | 0.05 | mrad | |||
Warming Time | @PO | Tw | 5 | min | ||
Noise | RMS(10Hz-100MHz) | N | 1 | % | ||
Service Life | @PO | MTBF | 10000 | Hrs |