808nm 2000mW High Output Power IR Semiconductor Laser

Price: $730.00


808nm 2000mW High Output Power IR Semiconductor Laser

This semiconductor laser is designed in strict accordance with the scientific and industrial level standards. It has the characteristics of tight structure, stable performance, reliable quality, excellent beam quality and stable power. 

It is widely used in industrial detection, scientific research, biology, spectroscopy and other fields.
The laser driver and controller have humanized operating interface, which is easy and convenient to use and control.


Product Name 808nm 2000mw solid state laser
Output Wavelength 808±3nm
Output Power ≤ 2000mW
Transverse mode Multimode
Operating mode CW
Power Stability ≤3% RMS (25℃ & 4 hours test data)
Beam stability ≤0.05(mrad) (25℃ & 4 hours test data)
Exit Pupil Diameter 4×4 mm@1/e2
Beam Divergence ≤ 2.0mrad
M2 Factor ≤ 3.0
Average power ≤ 30W
TTL Modulation ≤ 1kHz ((0|5V DC Level signal Input) )
Analog modulation ≤ 1kHz ((0~5V DC Voltage signal Input)
Temperature control mode TEC refrigeration / heating bidirectional temperature controller (temperature control accuracy: 0.1 ℃)
Warm-up Time < 5 minutes
Operating Temperature 10℃~40℃
Storage Temperature -20℃~60℃
Environmental humidity 20~85%RH
Vibration test GBT 2423.43-2008/-15m/s2 5-200Hz
Shock resistance IEC 60068-2-47:2005/-150 m/s2 11ms
Anti-electric Strength ≥2000V
Working life About 10,000 hours
Warranty 1 Year


1 x 808nm 2000mw laser
1 x Laser Power Supply